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Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

Identifieur interne : 001575 ( Main/Repository ); précédent : 001574; suivant : 001576

Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

Auteurs : RBID : Pascal:12-0121483

Descripteurs français

Pascal (Inist)
- Cellule solaire, Méthode optimisation, Lumière solaire, Rayonnement IR, Hétérostructure, Couche mince, Point quantique, Semiconducteur III-V, Composé binaire, Indium Arséniure, Diélectrique, GaAs, InAs, As Ga, As In, 8460J, Sub longueur onde, Photonique.

English descriptors

KwdEn :
- Binary compound, Dielectric materials, Heterostructures, III-V semiconductors, Indium Arsenides, Infrared radiation, Optimization method, Photonics, Quantum dot, Solar cell, Subwavelength, Sunlight, Thin film.

Abstract

Sub-wavelength photonic structures and nanoscale materials have the potential to greatly improve the efficiencies of solar cells by enabling maximum absorption of sunlight. Semiconductor heterostructures provide versatile opportunities for improving absorption of infrared radiation in photovoltaic devices, which accounts for half of the power in the solar spectrum. These ideas can be combined in quantum-well solar cells and related structures in which sub-wavelength metal and dielectric scattering elements are integrated for light trapping. Measurements and simulations of GaAs solar cells with less than one micron of active material demonstrate the benefits of incorporating In(Ga)As quantum-wells and quantum-dots to improve their performance. Simulations that incorporate a realistic model of absorption in quantum-wells show that the use of broadband photonic structures with such devices can substantially improve the benefit of incorporating heterostructures, enabling meaningful improvements in their performance.

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Pascal:12-0121483

Le document en format XML

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<author><name sortKey="Mcpheeters, Claiborne O" uniqKey="Mcpheeters C">Claiborne O. Mcpheeters</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin</s1>
<s2>Austin, TX 78758</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
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<country>États-Unis</country>
<placeName><settlement type="city">Austin (Texas)</settlement>
<region type="state">Texas</region>
</placeName>
<orgName type="university">Université du Texas à Austin</orgName>
</affiliation>
</author>
<author><name>DONGZHI HU</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>DFG-Center for Functional Nanostructures, Karlsruhe Institute of Technology</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
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<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
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</author>
<author><name sortKey="Schaadt, Daniel M" uniqKey="Schaadt D">Daniel M. Schaadt</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>DFG-Center for Functional Nanostructures, Karlsruhe Institute of Technology</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Allemagne</country>
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<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Yu, Edward T" uniqKey="Yu E">Edward T. Yu</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin</s1>
<s2>Austin, TX 78758</s2>
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<publicationStmt><idno type="inist">12-0121483</idno>
<date when="2012">2012</date>
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<term>Indium Arsenides</term>
<term>Infrared radiation</term>
<term>Optimization method</term>
<term>Photonics</term>
<term>Quantum dot</term>
<term>Solar cell</term>
<term>Subwavelength</term>
<term>Sunlight</term>
<term>Thin film</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term>
<term>Méthode optimisation</term>
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<term>Rayonnement IR</term>
<term>Hétérostructure</term>
<term>Couche mince</term>
<term>Point quantique</term>
<term>Semiconducteur III-V</term>
<term>Composé binaire</term>
<term>Indium Arséniure</term>
<term>Diélectrique</term>
<term>GaAs</term>
<term>InAs</term>
<term>As Ga</term>
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<front><div type="abstract" xml:lang="en">Sub-wavelength photonic structures and nanoscale materials have the potential to greatly improve the efficiencies of solar cells by enabling maximum absorption of sunlight. Semiconductor heterostructures provide versatile opportunities for improving absorption of infrared radiation in photovoltaic devices, which accounts for half of the power in the solar spectrum. These ideas can be combined in quantum-well solar cells and related structures in which sub-wavelength metal and dielectric scattering elements are integrated for light trapping. Measurements and simulations of GaAs solar cells with less than one micron of active material demonstrate the benefits of incorporating In(Ga)As quantum-wells and quantum-dots to improve their performance. Simulations that incorporate a realistic model of absorption in quantum-wells show that the use of broadband photonic structures with such devices can substantially improve the benefit of incorporating heterostructures, enabling meaningful improvements in their performance.</div>
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Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri